Insights Into the Two-Dimensional MoS2 Grown on AlGaN(GaN) Substrates by CVD Method

Guofeng Yang,Xiumei Zhang,Bingjie Ye,Naiyan Lu,Xinxia Huo,Yufei Yao,Yan Gu,Feng Xie,Yu Ding

doi:10.1109/jphot.2021.3120797

Guofeng Yang, Xiumei Zhang + Show 7 more

Open Access

https://doi.org/10.1109/jphot.2021.3120797

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Journal: IEEE Photonics Journal	Publication Date: Dec 1, 2021
Citations: 4	License type: CC BY 4.0

Affiliation: Jiangnan University, Anhui University

Abstract

Two-dimensional (2D) MoS 2 was grown on AlGaN(GaN) substrates by chemical vapor deposition (CVD) and 2D-3D MoS 2 -AlGaN(GaN) heterostructures were formed. The MoS 2 crystal on AlGaN surface has a mixed and irregular shape including single and multiple layers, while the single layer of triangular MoS 2 is basically prepared on GaN surface. Combined with theoretical first-principles analysis, it is found the adsorption of AlGaN to MoS 2 is lower than that of GaN, which leads to the deposition of MoS 2 molecules on AlGaN surface, forming multilayer shapes. In addition, Both the MoS 2 -AlGaN(GaN) heterostructures exhibit indirect band gaps and broad-band light absorption performances.

Highlights

A S ONE of the important members of two-dimensional (2D) transition metal chalcogenides, 2D semiconducting MoS2 has high carrier mobility, excellent chemical stability and thermodynamic stability, which is very suitable for electronic and optoelectronic device applications [1], [2]
III-nitiride bulk compound semiconductors occupy an important position in the semiconductor device industry due to their wide applications in power devices [3], light emitting diodes (LEDs) [4], laser diodes (LDs) [5], and photodetectors [6]
Hexagonal wurtzite structure (WZ) GaN has high thermodynamic, mechanical and chemical stability, and its wide direct band gap of 3.4–3.5 eV is widely used in short-wavelength blue and green optoelectronic devices [7]–[9]

Summary

Introduction

A S ONE of the important members of two-dimensional (2D) transition metal chalcogenides, 2D semiconducting MoS2 has high carrier mobility, excellent chemical stability and thermodynamic stability, which is very suitable for electronic and optoelectronic device applications [1], [2]. In this work, we directly grew 2D MoS2 on AlGaN and GaN surfaces by chemical vapor deposition (CVD) method to form 2D-3D heterostructure. The binding energy, electronic energy band, and absorption properties of the 2D MoS2-AlGaN (GaN) hybrid heterostructures were investigated by first-principles calculations, and the interlayer interaction of the heterostructures was explored.

Results

Conclusion