Insights into the optoelectronic, thermodynamic, and thermoelectric properties of novel BaYCuX3 (X = Se, Te) semiconductors from first-principles investigation

Abstract

The widely used density functional theory was employed to study an intricate relationship of the optoelectronic, thermodynamic, and transport features of novel quaternary BaYCuX3 (X = Se, Te) semiconductors. The conduction band region is significantly impacted by the Ba-d and Y-d states, with negligible contributions from the S-s/p/d and Te-s/p/d states. The valence and conduction bands peak at the high symmetry Γ and Y sites, revealing an indirect energy band nature. The predicted band gaps for the BaYCuSe3 and BaYCuTe3 using the WC-GGA and TB-mBJ approximations are 0.96, 1.31 eV, and 0.54, 0.89 eV, respectively. The small atomic size of selenium in BaYCuSe3 material contributes to strong bonding, resulting in a larger energy gap as compared to BaYCuTe3. Maximum values of ε1(ω) drop as photon frequency increases, eventually approaching negative in some energy ranges. The absorption coefficient spectra shifted toward lower energy as the anion changed from Se to Te. Furthermore, the BaYCuTe3 has plasmon resonances at higher energies as compared to BaYCuSe3, resulting in increased energy loss. Furthermore, the BaYCuTe3 material exhibits maximum thermal conductivity than BaYCuSe3 across the whole temperature range.