Insights into temperature influence on analog/RF and linearity performance of a Si/Ge heterojunction asymmetric double gate dopingless TFET

Abstract

The charge-plasma based dopingless (DL) tunnel field effect transistor (TFET) is considered as an emerging TFET structure resulting from its immunity against random dopant fluctuations and not requiring high thermal budgets and expensive annealing methods for fabrication. But, temperature sensitivity is a major concern to predict the reliability of a device as the bandgap of semiconductor material changes under the influence of temperature variations when used in a system. Therefore, in this manuscript, the effect of variations in temperature (200–500 K) are investigated on the analog/RF and linearity characteristics of a Si/Ge hetero-junction (HJ) asymmetric double gate (ADG) DLTFET and abbreviated as HJ-ADG-DLTFET in the entire manuscript. In this context, Silvaco ATLAS simulator is used to evaluate DC and Analog/RF performance parameters such as $$I_{D}-V_{G}$$ characteristics, transconductance ( $$g_{m}$$ ), cut off frequency ( $$f_{T}$$ ) and transconductance generation factor (TGF) considering effect of temperature variations. Furthermore, linearity parameters such as second- and third-order voltage intercept point ( $$\mathrm{VIP}_{2}, \mathrm{VIP}_{3}$$ ), 1-dB compression point, third-order input-interception point ( $$\mathrm{IIP}_{3}$$ ) and intermodulation distortion $$(\mathrm{IMD}_{3})$$ are also evaluated considering temperature variations as these FoM are significant for linear and analog/RF applications.