Insights into mechanism of UV-induced degradation in silicon heterojunction solar cells

Abstract

The ultraviolet-induced degradation (UVID), with losses of up to 11 % after 2000 h-exposure (Sinha et al., 2023) [1], impairs long-term stability of silicon heterojunction (SHJ) solar cells at present. However, the mechanism of UVID has remained only roughly understood till now. Herein, we shed light on the electrical properties of defects in SHJ solar cells to elucidate the underlying mechanism. Defect generation in SHJ solar cells after ultraviolet (UV) irradiation can be observed from photoluminescence (PL) images. Furthermore, we extract the density of states near Fermi level in hydrogenated amorphous silicon (a-Si:H) through analyzing carrier transport mechanism, and find the increment of state density induced by the UV irradiation. In conjunction with Fourier-transform infrared (FTIR) spectra, we ascribe the UV-induced defects to the rupture of Si–H and Si–H2 bonds. Besides, the intersection point between Fermi levels of the c-Si and a-Si:H/c-Si interface can be found shift toward valence band from admittance spectrum analysis, which is the cause of the higher interface state density based on the theory of Fermi energy dependent hydrogen diffusion energy. As a result, a potential mechanism of generation of recombination centers responsible for UVID in SHJ solar cells is proposed, which could provide insights into the possible solutions for UVID and enhance the long-term stability of SHJ solar cells.