Abstract
A high-performance flexible HfO2 resistive random access memory (RRAM) device is fabricated herein on a polyimide (PI) substrate, and the effect of different top electrodes (TE) on RRAM characteristics were investigated with the same TiN bottom electrode. Compared with Al or Ni TEs, the switching characteristics of devices with indium tin oxide (ITO) TEs are improved, producing a low power consumption (50 µA@0.5 V for SET and 15 µA@-0.2 V for RESET) and high DC endurance cycles (>3 × 105). The flexible devices show stable resistive properties under different bending radii of up to 4 mm, and over 1.5 × 105 writing/erasing cycles are confirmed after bending the device 1,000 times. The switching mechanism based on ITO/HfO2 interfacial reactions is constructed, and the microscopic oxygen vacancies distribution under directional external biases is elaborated according to the C-V test under various frequencies, HRTEM and XPS data. Furthermore, it is revealed that the interface layer between the TE and the switching layer is the key role, which can maintain switching behaviors and improve electronic properties with the presence of a mechanical stress because of the stable interfacial reactions caused by Sn4+ in ITO film.
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