Inside Cover: Combined Secondary Ion Mass Spectrometry Depth Profiling and Focused Ion Beam Analysis of Cu Films Electrodeposited under Oscillatory Conditions (ChemElectroChem 5/2015)

Abstract

The figure shows a Cu wafer that has been processed with an additive package (SPS, Imep). The graph superimposed on the picture shows a characteristic linear-sweep voltammogram of the Cu deposition process in the presence of these additives. The N-shaped negative differential resistance is the physical origin of the oscillatory behavior during Cu deposition under galvanostatic conditions as reported by P. Broekmann et al. on p. 664.