Abstract
In their Rapid Research Letter on pp. 148–150, Ion Tiginyanu et al. demonstrate that focused ion beam (FIB) processing in combination with photo- electrochemical (PEC) etching is a versatile tool for the design and maskless fabrication of ultra-thin GaN membranes suspended over micro/nanocolumns and micro/nanowalls. The proposed novel approach represents a technological breakthrough in the fabrication of ultrathin suspended membranes of non-layered crystalline semiconductor solids. The drawing shows a collage of a bridge-like GaN membrane, the spatial architecture of both the ultrathin membrane and the supporting micro/nanowalls being fully defined by the features of FIB direct writing and PEC etching. These findings pave the way for the fabrication of ultrathin suspended GaN membranes for various MEMS/NEMS applications, and open the unique possibility for 3D nanostructuring of gallium nitride in a controlled fashion.
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