Abstract
Although C60 is known as a typical n-type organic semiconductor, Schottky-type cells of an ITO/C60/Al structure do not show definite photovoltaic effects. Thin metallic interlayers were inserted at the C60/Al interface to examine enhancement of the power conversion efficiency in the cells. An ITO/C60/Mg/Al cell showed an efficiency up to 0.15% for AM1.5, which is the largest efficiency in the Schottky-type cells of n-type organic semiconductors. The improvement of the photovoltaic effects seems to be caused by intercalation of Mg into C60 layer as a dopant.
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