Abstract
A Cu/SiO2/Pt structure is usually used to study the resistive memory properties of an electrochemical resistive random access memory. It can be reversibly switched between low- and high-resistance states by using DC voltages in the atmosphere. However, its resistive switching behavior disappears in a vaporless environment because no conducting filaments can be formed within the Cu/SiO2/Pt structure. This study inserted a graphene oxide (GO) layer to fabricate a Cu/GO/SiO2/Pt structure that could be resistively switched in a vaporless environment. The X-ray photoelectron spectra depth profile of the Cu/GO/SiO2/Pt structure showed that oxygen-related groups of the GO film reacted with the Cu electrode. The GO film assisted Cu ionization in a vaporless environment, and Cu ions could migrate in an electrical field to the Pt electrode. Cu conducting filaments were formed and ruptured by different polarity voltages, and the resistance of the Cu/GO/SiO2/Pt structure could be reversibly switched in a vaporless environment. A schematic model was proposed to explain the switching mechanisms in the atmosphere and a vaporless environment.
Highlights
After the development of consumer electronic products, semiconductor non-volatile memory (NVM) has become increasingly prevalent due to its high operation speed, low power consumption, and shock immunity
The resistance of a resistive random access memory (RRAM) device can be reversibly switched between a high-resistance state (HRS) and a low-resistance state (LRS) using applied voltages
The resistive switching behaviors of RRAM devices are influenced by its material group, defect status, and device structure [5,6], and the switching mechanisms are usually dominated by valence change mechanisms [7], thermochemical reactions [8], and electrochemical reactions [9]
Summary
After the development of consumer electronic products, semiconductor non-volatile memory (NVM) has become increasingly prevalent due to its high operation speed, low power consumption, and shock immunity. Graphene is a two-dimensional material with superior electrical and mechanical properties [14], making it a very attractive material for many applications such as integrated circuits [15] and mechanical resonators [16]. Many methods, such as chemical vapor deposition [17] and reduced. The GO film with numerous oxygen-related groups reacted with the Cu electrode to help the dissolution process of Cu ions into the SiO2 layer. The Cu/GO/SiO2 /Pt structure can be resistively switched in a vaporless environment
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