Abstract
We report aluminum doped zinc oxide (AZO) films with high work function as an insertion layer between transparent conducting oxides (TCO) and hydrogenated amorphous silicon carbide (a-SiC:H) layer to improve open circuit voltage (V(oc)) and fill factor (FF) for thin film solar cells. Amorphous silicon (a-Si:H) solar cells exhibit poor fill factors due to a Schottky barrier at the interface between a-SiC:H window and TCO. The interface engineering is carried out by inserting an AZO layer with high work function (4.95 eV at O2 = 2 sccm). As a result, V(oc) and FF improved significantly. FF as high as 63.35% is obtained.
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