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Abstract
SCLC measurements in single crystals of the layered semiconductor n-type InSe are reported. The measurements were carried out at various temperatures and on samples grown with indium added in excess (from 5 to 10%). The experimental results suggest that the trapping levels location and the charge transport are dependent on the indium excess. Only the samples grown with an indium excess of about 5% show the features typical of intrinsic semiconductors. The anomalous behaviour of samples grown with indium excess between 6 and 10 is explained by means of scattering mechanisms between charge carriers and ionized impurity centers.
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