Abstract
One-step synthesis of the composite thin film with InSb nanocrystals embedded in ZnO doped with Ge was investigated. The films were deposited on water-cooled substrate by radio-frequency sputtering using a target of ceramic ZnO disc with InSb and Ge chips and subsequently heat-treated in vacuum. The composites exhibited a shift in optical absorption edge due to a presence of InSb nanocrystals. Elemental mapping using energy dispersive X-ray microscopy revealed that the added Ge was selectively located in ZnO. The solubility limit of Ge in ZnO was 2 at.% at an annealing temperature of 873 K. Electrical resistivity of the composite was reduced to 6.6 × 10-3 Ω cm at an annealing temperature of 773 K due to doping with Ge. Simultaneous addition of InSb and Ge to ZnO therefore provided the different functionalities of the optical absorption shifts and relatively low electrical resistivity.
Highlights
Nanocomposite thin films with narrow-gap-semiconductor nanocrystals embedded in wide-gap host materials are potential application to optoelectronic devices such as infrared detectors1–3 and quantum dot solar cells.4 Optical band gaps of the narrow gap semiconductors shift with respect to crystalline sizes due to quantum confinement effects, indicating that optical absorption edge can be tuned desirably by tailoring the sizes
We propose a new nanocomposite thin film with InSb nanocrystals embedded in ZnO doped with Ge, and one-step synthesis of the nanocomposite is demonstrated to exhibit different functionalities of quantum confinement effects in
Prior to investigate simultaneous addition of InSb and Ge to ZnO, we focus on Ge-added ZnO thin films to clarify a solubility limit of Ge in the present technique
Summary
Nanocomposite thin films with narrow-gap-semiconductor nanocrystals embedded in wide-gap host materials are potential application to optoelectronic devices such as infrared detectors and quantum dot solar cells. Optical band gaps of the narrow gap semiconductors shift with respect to crystalline sizes due to quantum confinement effects, indicating that optical absorption edge can be tuned desirably by tailoring the sizes. Nanocomposite thin films with narrow-gap-semiconductor nanocrystals embedded in wide-gap host materials are potential application to optoelectronic devices such as infrared detectors and quantum dot solar cells.. Optical band gaps of the narrow gap semiconductors shift with respect to crystalline sizes due to quantum confinement effects, indicating that optical absorption edge can be tuned desirably by tailoring the sizes. Wide-gap host materials are generally insulator (e.g., SiO2, Al-O), but carrier transport in an oxide-host was enhanced by employing transparent conductive oxide (e.g., ITO).. The composites should retain the two functionalities of quantum confinement effects in nanocrystals and relatively low electrical resistivity in hosts for such use. We’ll focus here on simultaneous deposition (i.e., one-step synthesis) of three materials for nanocrystals, hosts, and dopants to prepare nanocomposites with the valuable functionalities, this technique usually employs two materials for nanocrystals and hosts In sputtering deposition of nanocomposites, there are typically two ways, using one sputtering target with elemental chips for simultaneous deposition and dual targets for sequential deposition. We’ll focus here on simultaneous deposition (i.e., one-step synthesis) of three materials for nanocrystals, hosts, and dopants to prepare nanocomposites with the valuable functionalities, this technique usually employs two materials for nanocrystals and hosts
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
