Abstract
InSb thin films were grown on GaAs (1 0 0) substrates by molecular beam epitaxy (MBE). N-type impurity (Sn and Si) doping of InSb was investigated for the purpose of reducing its temperature dependence of resistivity. It was found that stable Sn-doped InSb thin films with large electron mobility (4.5×10 4 cm 2/V s) and sheet electron concentration (7.2×10 12 cm −2) can be fabricated. Magneto-resistance (MR) devices using these films show a large enough MR effect and an extremely small temperature dependence of resistance.
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