InSb p-channel metal-oxide-semiconductor field-effect transistor prepared by photoenhanced chemical vapor deposition

Abstract

The InSb metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated successfully. The SiO2 prepared by photoenhanced chemical vapor deposition was used both as the gate insulator and the source/drain passivation layer to reduce the source/drain pn junction surface leakage current. The common-source current-voltage (I-V) characteristics show a breakdown voltage exceeding 2 V indicating excellent pn junction reverse characteristics. The achieved field-effect mobility for a hole in the linear region is 230 cm2/V s. An anomalous kink effect is observed in the common-source I-V characteristics when the substrate is floating.