Abstract
We report direct growth of InSb nanowires (NWs) and monolithic device fabrication on flexible plastic substrates. The nanowires were grown using metal–organic vapor-phase epitaxy (MOVPE) in self-catalyzed mode. The InSb NWs are shown to form in the zinc-blende crystal structure and to exhibit strong photoluminescence at room temperature. The NW array light-trapping properties are evidenced by reflectance that is significantly reduced compared to bulk material. Finally, the InSb NWs are used to demonstrate a metal–semiconductor–metal photoresistor directly on the flexible plastic substrate. The results are believed to advance the integration of III–V nanowires to flexible devices, and infrared photodetectors in particular.
Highlights
III−V semiconductor nanowires (NWs) have been extensively studied over the last 2 decades, propelling the research of numerous intriguing nanowire-based functional devices such as lasers,[1−3] light-emitting diodes (LEDs),[4] all-optical logic components,[5] solar cells,[6] and photodetectors.[7]
InSb NWs were synthesized on flexible plastic substrates directly inside a horizontal-flow atmospheric-pressure metal−organic vaporphase epitaxy (MOVPE)
We have demonstrated for the first time the growth of InSb nanowires by metal−organic vapor-phase epitaxy (MOVPE) directly on flexible plastic substrates
Summary
III−V semiconductor nanowires (NWs) have been extensively studied over the last 2 decades, propelling the research of numerous intriguing nanowire-based functional devices such as lasers,[1−3] light-emitting diodes (LEDs),[4] all-optical logic components,[5] solar cells,[6] and photodetectors.[7]. There is a lack of reports on light-emitting
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