InSb:Mn – A high temperature ferromagnetic semiconductor

Abstract

Diluted magnetic semiconductor InSb:Mn exhibits a ferromagnetic behavior up to T ∼ 600 K due to presence of nanosize MnSb precipitates [Kochura et al., J. Appl. Phys. 113, 083905 (2013)]. Transport properties of InSb:Mn, including the resistivity, the magnetoresistance (MR), and the Hall effect, are investigated between T ∼ 1.6 and 300 K in magnetic fields B up to 15 T. The resistivity, ρ(T), displays an upturn with lowering the temperature below T ∼ 10–20 K attributable to the Kondo effect, where the universal Kondo behavior is observed. The Hall resistivity, ρH, demonstrates a nonlinear dependence on B up to T ∼ 300 K, suggesting an anomalous contribution due to the effect of the MnSb nanoprecipitates. The relative MR, Δρ(B)/ρ(0), is positive (pMR) above T ∼ 10 K and transforms into a negative one (nMR) with lowering temperature. The Hall effect and pMR are interpreted simultaneously with the two‐band model, addressed to presence of the two types of holes with quite different concentrations and mobilities. The dependences of nMR on B and T follow those of the Khosla–Fischer model, taking into account damping of the spin‐dependent scattering of charge carriers in magnetic field.