Abstract
n-Type indium antimonide-Au hybrid macro-structure was successfully fabricated on p-GaAs substrate by a simple and economic flash evaporation technique. The elemental composition of the prepared InSb film was confirmed by energy dispersive X-ray spectroscopy microanalysis (EDX). The surface topography and crystal structure of the InSb film was characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. The magnetoresistance of the prepared hybrid macro-structure was measured and discussed in terms of the model of current redistribution.
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