Abstract
ABSTRACTInSb has served as an important mid-wave IR (λ=3−5μm) detector material for several decades. In this presentation, we will briefly review General Electric's InSb Charge Injection Device technology. Emphasis will be placed on device performance as a function of material parameters. A new InSb materials technology utilizing liquid phase epitaxy will be described. This epitaxial growth technology improves InSb material parameters and increases minority carrier lifetimes by more than two orders of magnitude to near the Auger limit. Comparisons will be made between available bulk material parameters and that of the epitaxial material.
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