Abstract
This paper proposes a transimpedance amplifier (TIA) for a 100 Gb/s optical receiver. The proposed TIA adopts a gm-boosted common-gate input stage with a diode-connected transistor, which lowers the input resistance resulting in a high input pole frequency. It was designed and fabricated in 32 nm CMOS SOI technology. Measurement results indicate that the TIA achieves a bandwidth of 74 GHz and a transimpedance gain of 26 dBΩ while dissipating 16.5 mW under 1.5 V supply voltage. The bandwidth of the proposed TIA is larger by 48% or more when compared with state-of-the art TIAs.
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