Input power induced thermal effects related to transition time between avalanche and second breakdown in p-n silicon junctions

Abstract

The dependence of the transition time between avalanche breakdown and second breakdown on the input power to a p-n junction was studied both in transistor configurations and in single junction structures. The transition time is observed to decrease with increased input power. The dependence of the transition time on the input power indicates a constant input energy for which second breakdown occurs. The effect the thermal heating may have on conduction in a junction is also considered. The constant energy required and related occurrence of melt channels in the junction region are felt to support the thermal hypothesis.