Abstract
Abstract The optimization of laser scribing for the interconnection of CIGS solar cells is a current focus of laser process development. In addition to the geometry of the laser scribes the impact of the laser patterning to the electrical properties of the solar cells has to be optimized with regards to the scribing process and the laser sources. In-process measurements provide an approach for reliable evaluation of the electrical characteristics. In particular, the parallel resistanceR p that was calculated from the measured I–V curves was measured in dependence on the scribing parameters of a short-pulsed ns laser in comparison to a standard ps laser at a wavelength of 1.06 μm. With low pulse overlap of ∼20% a reduction of R p to 2/3 of the initial value has been achieved for ns laser pulses. In comparison to ps laser slightly more defects were observed at the investigated parameter range.
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