Year-end Sale % OFF 
Abstract
A formula is derived for the in-plane effective mass in narrow quantum wells, taking into account the effects of energy band nonparabolicity. The variation of the mass with the width of the well is studied by using the formula for four systems of wells. The mass is nearly the same as the velocity effective mass of the bulk material of the well in GaAs/Ga0.7Al0.3As wells. It is about 8% larger in InAs/InP wells, but is significantly larger in very narrow wells of Ga0.47In0.53As/InP systems. In the case of InAs/Ga0.58Al0.42Sb wells, the in-plane mass differs from the well mass by large amounts for all well widths of interest.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
