Abstract
Hybrid pulse laser deposition and liquid phase epitaxy methods have been used to produce in-plane c-axis (IPCA) oriented barium ferrite (BaM) films on a-plane (112¯0) sapphire substrates with low microwave loss and a high remanence. Total thicknesses were from 5to20μm. A reasonable compromise for low loss and high remanence was reached at a thickness of 7μm, with a remanence ratio of 0.84 and a 59GHz peak-to-peak derivative linewidth of 250Oe. The 20μm thick film had a linewidth of 110Oe, one of the smallest values ever obtained for IPCA BaM films.
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