InP/InGaAs/InP double heterojunction bipolar transistors with improved dc and microwave performance grown by solid source molecular beam epitaxy

Abstract

This paper describes the fabrication and characterization of the InP/InAs/InP double heterojunction bipolar transistors grown by solid-source molecular beam epitaxy (SSMBE). An improvement in current gain and microwave noise has been observed for the SSMBE-grown InP/InGaAs DHBTs. The HBT with a 50 nm, 2 X 19 cm-3 Be-doped base exhibits dc current gain as high as 350, which is about two times of that measured on the referenced devices grown by gas-source molecular beam epitaxy. The HBT with 5 X 5 micrometers 2 emitter shows a minimum noise figure of 1.04 dB and associated gain of 16 dB measured at 2 GHz with Ic equals 1 mA. In comparison, the HBT grown by GSMBE gives an Fmin of 1.9 dB under same measurement condition. A slight increase in fT and fmax for the SSMBE-grown HBT has also been observed. The drastic increase of current gain for the SSMBE-grown HBT could be explained by reducing base recombination due to the ful elimination of hydrogen contamination during the material growth.© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.