Abstract
InP/InGaAs heterojunction bipolar transistors (HBTs) with low-resistance Ti/Pt/Au contact directly on heavily doped InP emitter layer have been demonstrated. A specific contact resistance of Ti/Pt/Au to n-type InP with doping concentration of 2×1019 cm−3 was investigated with the tunneling model theoretically and transmission line model (TLM) experimentally, revealing that it depends greatly on the doping level. TLM measurements exhibited a low specific contact resistance of 3.5×10−7 Ω cm2, which can be applicable to the fabrication of HBTs. InP/InGaAs HBTs with n+-InP emitter layer have been demonstrated with excellent dc characteristics, including a low offset voltage of 0.12 V, a knee voltage of 0.5 V, and a current gain of 28. These results verify that the heavily doped InP emitter layer allows a low-resistance contact.
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