Abstract
In/Pd-doped SnO2 is synthesized via a sol-gel method and coated on a silicon substrate with Pt electrodes to fabricate a micro-structure sensor. The sensor can be used to detect CO down to 1 ppm (the sensitivity is about 3), and the response time and recovery time are about 5 and 15s, respectively. Excellent selectivity is also found based on our sensor. These results demonstrate a promising approach to fabricate high-performance CO sensors with high sensitivity and quick response.
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