Abstract
The interest in single mode lasers for the 1.3–1.55 μm wavelength region prepared by liquid phase epitaxy requires the growth onto non-planar structured InP substrates. A technique for substrate protection to eliminate thermal degradation prior to growth, together with a thermal oxide desorption, is shown to be very effective for this purpose. Characterization of the InP+Sn protection system and results of substrate protection with different techniques are reported. The effectiveness of the method is demonstrated by SEM observations, X-ray double crystal diffraction measurements and results on DH broad area lasers.
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