Abstract
An InP/sub x/O/sub y/ film formed by P/sub 2/O/sub 5/ evaporation and annealing below 380 degrees C was applied to enhance the Schottky barrier height for InP diodes and MESFETs. Optimizing the film formation, an InPxO/sub y/ film of less than 10 nm in thickness has been obtained reproducibly. The film and the film/InP interface were evaluated by X-ray photoelectron spectroscopy (XPS) and Auger electron Spectroscopy (AES) analysis. The best Au (1 mm phi )/InP/sub x/O/sub y//InP diode showed barrier height as high as 0.95 eV, an ideality factor of 1.2, and a reverse current of 100 pA at -10 V. Applying the structure of Au-InP/sub x/O/sub y/-InP to the MESFET, a transconductance of 106 mS/mm in the 0.8 mu m gate length FET was demonstrated. >
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