Abstract
We used spectroscopic ellipsometry to analyze the refractive index and the absorption coefficient of thin buffer layers of InP grown by metalorganic vapor phase epitaxy on Si substrates. We found a pronounced influence on the crystallographic properties of the subsequently grown InP main layer. The drastically increased optical absorption of the buffer layers is possibly caused by a high density in misfit dislocations or twins originating from the difference in lattice constants of InP and Si.
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