Abstract
Two types of InP growth in GaP-based nanowires have been reported. The nanowires were grown by the vapor–liquid–solid method using Au particles of around 20-nm diameter as catalysts. For GaP/InP/GaP nanowire growth, InP egg-like structures were formed when the InP growth temperature was higher than the GaP growth one. Successively, the second GaP nanowire could be grown on these InP structures. Transmission electron microscopy and energy dispersive X-ray spectroscopy analyses indicated that these InP nanostructures were grown in both the axial and radial directions and that the edge of the first GaP nanowires was partly covered with InP, which formed a core-shell structure. For InP capping growth, which was performed after the growth of two-times-alternated GaP/GaAs on GaP nanowires, selective InP growth on the two GaAs parts was confirmed.
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