Abstract
The small-signal equivalent circuit of an ion-implanted InP JFET is presented. The nominal design parameters of the JFET include a 1017 cm-3 channel doping, a channel thickness of 0.2 μm, and a gate length of 2 μm. Based on measured S-parameters, the values of fr and fmax, are 10 and 22 GHz, respectively, which are the largest measured values for an InP JFET reported to date. The output resistance is found to be less than that of a corresponding GaAs MESFET and a larger VDS has to be applied to reach its maximum value. The gate-to-drain feedback capacitance has a value between those of GaAs and InP MESFETs. Negative differential resistance, as evidenced by dc and microwave measurements, is observed in devices with a channel thickness larger than approximately 0.5 μm. This result, adjusted for possible substrate current, is shown to be consistent with the simple theory of stationary Gunn domain formation.
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