InP heterojunction bipolar transistor with a selectively implanted collector

Abstract

This paper presents a new InP HBT structure with a collector pedestal under the HBT's intrinsic region by using selective ion implantation and MBE regrowth. This is the first such structure reported in III–V HBTs. Our results exhibit excellent DC performances including high current gain, low base–collector leakage current, and low collector access resistance. One-hundred and seventy gigaHertz f t and 130 GHz f max were obtained. The RF performances were found to be limited by the regrowth interface charge accumulation. This is expected to be overcome by using compensating p-doping at the regrowth interface.