Abstract
We present experimental studies of terahertz radiation detection by InP double heterojunction based transistors. We analyze the relation between their static characteristics and the experimentally determined voltage and current responsivities, showing importance of internal device parasitic capacitances and the external circuit loading effects. Finally, we demonstrate the use of these transistors for terahertz radiation computed tomography leading to 3D visualization of concealed objects. Our results pave the way towards wide use of heterojunction based transistors for terahertz imaging.
Highlights
Nowadays high frequency electronics uses two distinct families of transistors: field effect transistors and heterojunction based transistors (HBTs)
We present experimental studies of THz detection by InP double heterojunction based transistors (DHBTs),[12] in a mode where only the emitter-base junction of DHBT rectifies THz radiation and collector-base junction is unbiased
We demonstrate DHBT THz imaging capabilities in the experiments of computed tomography showing an efficient 3D imaging of concealed objects
Summary
Nowadays high frequency electronics uses two distinct families of transistors: field effect transistors and heterojunction based transistors (HBTs). They compete reaching impressive cut off frequencies going up to terahertz (THz) range. Except their usual functions related to switching and amplifying of voltage or current, both have been demonstrated as efficient direct THz radiation detectors.[1,2,3,4,5,6,7,8] both types of the transistors have shown that once equipped with antennas, they can capture THz radiation from the open space, rectify it, and deliver the voltage or current proportional to incoming THz radiation power.
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