Abstract
InP DHBTs are well known for their capability to provide both high cutoff frequencies together with high breakdown voltage. III-V Lab has developed for several years very high-speed and high swing integrated circuits based on this technology. In this presentation, we will focus on the technological features of present 0.7-μm InP/GaInAs DHBT exhibiting around 400-GHz fT and fMAX, as well as a breakdown voltage above 4.5 V and a high dissipated power above 35 mW at peak fT. The relaxed emitter width enables to work at moderate current densities and ensure a very high fabrication yield and performance homogeneity on 3’’ wafer. More compact 0.5-µm DHBT and circuit oriented device generation allowing above 500 GHz fmax is also presented. We will demonstrate that our technology is also compatible with the fabrication of GaAsSb-based InP DHBT and a comparison of the key figures of merits between Type-I and Type-II InP DHBTs fabricated in a same process will be presented.
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