Abstract
InP DHBT technologies are well established for high data rates at the III-V Lab in France and as a foundry at Teledyne in US. FBH has developed over the past years three InP DHBT technologies for high performance communications and sensing applications, with particular view on signal generation and amplification, as well as signal conversion. This presentation will provide details on the achieved results in the three InP DHBT technologies at FBH. The most prominent technology is the transferred substrate (TS) InP DHBT technology at FBH, where the host InP substrate is removed and the MMIC is realized on an eligible substrate of choice. With this technology, FBH has achieved 530 GHz cut-off frequency with a breakdown voltage of > 4 V. Using the TS InP DHBT process FBH has developed an InP-on-BiCMOS process, which is unique worldwide and which combines the advantages of high complexity of SiGe BiCMOS circuits with the performance capabilities of InP technology. Signal generation with integrated PLL synthesis has been demonstrated with this technology up to 300 GHz. Also highly compact front-end circuits for radar applications have been published. More recently, FBH has developed a robust triple-mesa MMIC process based on InP DHBT devices with cut-off frequencies beyond 300 GHz. The advantages and challenges of all three process will be discussed and evaluated during the talk
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