InP DHBT Process in Transferred-Substrate Technology With $f_{t}$ and $f_{\max}$ Over 400 GHz

Abstract

In this paper, a double heterojunction bipolar transistor (DHBT) process has been developed in transferred-substrate (TS) technology to optimize high-frequency performance. It provides an aligned lithographic access to frontside and backside of the device to eliminate dominant transistor parasitics. The transistors of 0.8 times 5-mum <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> emitter mesa feature f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> = 410 GHz and f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> = 480 GHz at a BV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ceo</sub> = 5.5 V. Parallel to the device setup, a multilevel metallization scheme is established. It serves as construction kit for 3-D configurations of active and passive elements. High yield of the TS DHBTs, consistent large-signal modeling, and accurate simulation of complex passive elements have been demonstrated and have proved the availability of the technology for advanced millimeter-wave circuit design.