Abstract
Depletion-mode aligned-gate InP MISFET's with gate lengths of 1.5-1 µm have given output power of 1.26-W/mm gate width and power-added efficiencies of up to 40 percent at 4 GHz. At 12 GHz, 0.75-W/mm gate width with 22-percent power-added efficiency was obtained. At 18 GHz, a power output of 331 mW (0.59 W/mm) with 3.1 dB of gain and 15.7-percent power-added efficiency was measured. An output power of 245 mW (0.44 W/mm) with 3-dB gain and 10.7-percent efficiency was obtained at 20 GHz.
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