Abstract
Waveguide-integrated photodiodes with InGaAs/GaAsSb type-II quantum well absorption regions designed to absorb light at 2 $ \mu$ m are presented. A novel dual-integrated waveguide-depletion layer was used to maximize quantum efficiency in photodiodes designed with thin absorbers for high-speed optical response. Low dark currents (1 nA at $-$ 1 V) and an internal responsivity of 0.84 A/W along with a bandwidth above 10 GHz and an open eye diagram at 10 Gb/s have been demonstrated at 2 $ \mu$ m. The high-speed carrier dynamics within InGaAs/GaAsSb type-II quantum wells are explored for the first time and suggest that the transit time of the photodiode is limited by light hole escape times in the quantum wells.
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