Abstract
Quantum-cascade laser structure has been grown on InP:S(001) substrate pre-patterned with SiO2 mask. The structure has grown coherently on InP substrate material in 40μm-wide stripe-windows of the SiO2 mask. Material deposited on SiO2 most layer is polycrystalline. The structure was processed in wide ridges, involving polycrystalline material at the sides and in narrow ridges, consisting exclusively of the center part of the crystalline region. These two kinds of ridges have both lased at comparable threshold current densities of 2–3kA/cm2 at λ=10.5μm at room temperature. This result demonstrates the feasibility of integration of quantum-cascade laser into integrated photonic circuits.
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