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Abstract
Summary form only given. The authors report p-channel heterostructure FETs fabricated on InP substrates, as well as advanced results on submicrometer n-channel HIGFETs. P-HIGFETs with 1- mu m nominal gate lengths were made using lattice-matched InGaAs channels and InAlAs barriers. Threshold voltage and threshold uniformity were studied as a function of gate length for n-channel InGaAs/InAlAs HIGFETs in the range from 0.4 to 1.2 mu m. Microwave characterization of several n-HIGFET wafers with gate lengths down to 0.3 mu m yielded cutoff frequencies of up to 115 GHz, corrected for pad capacitance, with an effective drift velocity of 2.0*10/sup 7/ cm/s. >
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