Abstract
Metalorganic molecular beam epitaxy (MOMBE) is shown to be a very practical growth method for epitaxial films on (110) InP substrates. Smooth surfaces can be obtained for InP, InGaAs, InGaAsP and InGaAs/InGaAsP multiple quantum wells (MQWs) by slightly angling the substrate orientation towards the [111]A or [111]B direction. The full width at half maximum (FWHM) values of X-ray diffraction spectra for InGaAs and InGaAsP are close to those of InP. In addition, InGaAs/InGaAsP MQWs on (110) InP have a photoluminescence intensity at room temperature comparable to the highest intensity of MQWs on (001) InP. A fabricated broad-area InGaAs/InGaAsP MQW laser exhibits a threshold current density of 0.83 kA/cm 2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
