Abstract
We report for the first time the mass production of Cs4PbBr6 perovskite microcrystal with a Couette-Taylor flow reactor in order to enhance the efficiency of the synthesis reaction. We obtained a pure Cs4PbBr6 perovskite solid within 3 hrs that then realized a high photoluminescence quantum yield (PLQY) of 46%. Furthermore, the Cs4PbBr6 perovskite microcrystal is applied with red emitting K2SiF6 phosphor on a blue-emitting InGaN chip, achieving a high-performance luminescence characteristics of 9.79 lm/W, external quantum efficiency (EQE) of 2.9%, and correlated color temperature (CCT) of 2976 K; therefore, this perovskite is expected to be a promising candidate material for applications in optoelectronic devices.
Highlights
We report for the first time the mass production of Cs4PbBr6 perovskite microcrystal with a CouetteTaylor flow reactor in order to enhance the efficiency of the synthesis reaction
For synthesis of the Cs4PbBr6 perovskite microcrystals with the Couette-Taylor flow method, 42.562 g of CsBr (0.2 mol) and 73.402 g of PbBr2 (0.2 mol) precursor were dissolved in 5 L of DMF
The absolute quantum yield was measured using the absolute PL quantum yield measurement system of Hamamatsu C9920–2 and the PL intensity, luminous efficacy, CRI, correlated color temperature (CCT), CIE coordinate number of the light emitting diodes (LED) operating at 3.2 V and [20, 40, 60, 70] mA were measured using the CSLMS LED 1060 of Labsphere
Summary
Young Hyun Song, Seung Hee Choi, Won Kyu Park, Jin Sun Yoo, Seok Bin Kwon, Bong Kyun Kang, Sang Ryul Park, Young Soo Seo, Woo Seok Yang3 & Dae Ho Yoon. The Cs4PbBr6 perovskite microcrystal is applied with red emitting K2SiF6 phosphor on a blue-emitting InGaN chip, achieving a high-performance luminescence characteristics of 9.79 lm/W, external quantum efficiency (EQE) of 2.9%, and correlated color temperature (CCT) of 2976 K; this perovskite is expected to be a promising candidate material for applications in optoelectronic devices. The QDs based on the CsPbX3 perovskite materials were synthesized with the hot injection method and showed narrow emission, high photoluminescence quantum yields over 90%, wide wavelength tunability (400–800 nm) and wide color gamut, meeting the requirements of display technology[1,10,11,12] This optical performance is impressive, there are still challenges that must be overcome for practical use of CsPbX3 QDs, such as the realization of large-scale fabrication[13,14] and stability in moisture when exposed to ambient conditions[15,16,17]. This technique can be an important method for application in the fabrication of optoelectronic devices
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