Abstract
This work introduces a process to optimize the design of a down-conversion mixer using an innovative strategy based on the gm/ID methodology. The proposed process relies on a set of technology-oriented lookup tables to optimize the trade-off between gain, power dissipation, noise, and distortion. The design is implemented using a 0.13 μm CMOS technology, and to the best of our knowledge, it possesses the best (post-layout simulation) figure of merit (FOM) among the works presented in literature. The FOM is defined as the product of gain and third-order intercept divided the product between average noise figure and power dissipation. Finally, the core of the mixer takes only 31 µm by 28 µm and it draws a current of 1 mA from the 1.5 V DC supply.
Highlights
The down-conversion mixer is a critical block in the design of systems based on the software-defined radio (SDR) architecture
The supply current drained by the mixer should be of less than 2 mA with a 1.5 V voltage
The circuit performances were validated for a LO sine wave with a frequency of 5.7 GHz and a maximum power of 0 dBm
Summary
The down-conversion mixer is a critical block in the design of systems based on the software-defined radio (SDR) architecture. MacEachern et al [2] propose a topology that relies on the charge injection method Their approach allows to improve both gain and linearity, it has the drawback that requires a significantly higher bias current and it worsens power consumption. Seo et al [3] exploit a switched biasing technique for the tail current source that results in a substantial reduction of the noise figure This benefit comes at the expenses of a significantly larger supply voltage and power dissipation than the traditional. The traditional approach to design analog circuits is based on modeling the drain current ID of MOSFET devices in saturation with the following lawmodeling. The traditional approach toregion design analog circuits is square based on MOSFET devices in saturation region with the following square law Equation (1) W ID = (1) 1 2 μC.
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