Abstract

Failure analysis (FA) plays an important role in the semiconductor industry as the process technology and new packaging is continuously improved. Missed out failure mechanisms and device recovery is a growing challenge in the FA field. In this paper, a new FA method is presented. A precise backside Fault Isolation was utilized in combination with Cross-section and Focused Ion Beam to uncover the Failure mechanism. The application of this method will be discussed on two case studies with different failure mechanisms.

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