Abstract
Currently, STT-MRAM is the one of the highly demanding device as a good replacement of the conventional working memory with the merits on the cost, power, performance, and reliability. With the new process challenges on MTJ stack, the resistive device of STT-MRAM, they require deep understanding on the invisible defect by the process sensitivity just beyond the approach to physical defect. For the first time, this paper will talk about how we could extend the scope of the process improvement on STT-MRAM through the specialized FA methodologies.
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