Abstract
• Growth of polycrystalline Tm 2 O 3 in nitrogen/oxide/nitrogen ambient. • Incorporating nitrogen ions into Tm 2 O 3 lattice. • Narrowing of Tm 2 O 3 band gap due to the presence of nitrogen ions. • MOS characteristics of Tm 2 O 3 passivation layer was reported. • Interface quality of Tm 2 O 3 /Si was evaluated. Thulium oxide (Tm 2 O 3 ) passivation layer was grown on silicon substrate using nitrogen/oxygen/nitrogen (NON) ambient at 600 °C. The incorporation of nitrogen ions into Tm 2 O 3 lattice has contributed to the release of oxygen ions, leading to the formation of positively charged oxygen vacancies, which could be supported by the shift of grazing incidence X-ray diffraction peaks with regards to Tm 2 O 3 to larger diffraction angle as well as the acquisition of positive effective oxide charge. Interface quality of the investigated Tm 2 O 3 passivation layer was examined based on Terman’s, Hill-Coleman and high-low frequency methods.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
