Abstract
A novel chemical vapor deposition (CVD)-Al technique of “bottom-up growth” was developed using methylpyrrolidine alane as a precursor and a (PVD)-TiN/CVD-TiN stacked barrier in a damascene structure. Poor step coverage of PVD-TiN caused an absence of PVD-TiN at the bottom of trenches, resulting in selective Al growth. The new method filled a 40-nm-wide trench (aspect ratio = 7.5) completely and showed robust electrical properties. The lowest line resistance was obtained at a stacked layer of PVD-TiN/CVD-Ru due to the low resistivity of Ru. Furthermore, the fine Al line structure fabricated by the new technique revealed that the Al line structure did not suffer severely from the size effect, which started to affect Cu damascene structures that were 50 nm wide.
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