Abstract
Abstract In this chapter, we review the recent progress made on the growth, characterization, and device applications of InN nanowires. Early research on InN nanowires is limited by their n-type degenerate characteristics, wherein the Fermi level is located deep in the conduction band, with the presence of high-density surface electrons. Recently, with the improved molecular beam epitaxy growth process, intrinsic and p-type InN nanowires have been realized, which are free of surface electron accumulation and Fermi-level pinning, providing great promise for a broad range of devices and applications.
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