Abstract
We have reported a new method of synthesis of InN nanowires (NWs) on p-Si (100) substrate by the vapour transport cum glancing angle deposition (GLAD) technique. The field emission gun transmission electron microscopy (FEG-TEM) reveals that the InN NWs are crystalline in nature. Photoluminescence (PL) analysis shows that the optical bandgap of the NW is ~1.07 eV at 300 K. Metal-Semiconductor-Metal (M-S-M) photodetecor has been fabricated using InN NWs. The device produced trivial dark current ~7.31 μA cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> at 3 V applied voltage. The broad band near-infrared (NIR) photo-response from 900-1400 nm was recorded for the device.
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