Abstract
InN 1D materials were successfully grown by metal-organic vapor phase epitaxy (MOVPE) and non-catalytic, template-free hydride metal-organic vapor phase epitaxy (H-MOVPE) on Si, GaN, and c-Al2O3 substrates. Dislocation-free, high-quality InN nanorods with [00.1] growth axis were formed via an apparent vapor-solid (VS) growth mechanism by H-MOVPE. On a contrary when conventional MOVPE was employed InN nanowires were grown via vapor-liquid-solid (VLS) mechanism. The controlled growth of self-seeded III-Nitride nanostructured materials has been demonstrated.
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